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參數(shù)資料
| 型號： | PI0256HSN |
| 英文描述： | 25-レm-Pitch Wide Aperture Spectroscopic Photodiode Arrays |
| 中文描述： | 25 -レ米間距寬孔徑光譜光電二極管陣列 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 555K |
| 代理商： | PI0256HSN |
PI0256HSN, PI0512HSN, PI1024HSN
Engineering Data Sheet
Page 7 of 8
March 13, 2002
Electro-Optical Characteristics
The following table lists the electro-optical characteristics.
Table 4. Electro-optical characteristics at 25°C.
Parameters
Symbol
Min
Typical
25
2500
6.25x10
-4
72
70
1.5
×
10
-4
2
430 (w/ cap)
170 (w/o cap)
65 (w/ cap)
25 (w/o cap)
0.2
600
180 – 1000
Max
Units
m
m
m
m
cm
2
%
%
C/J/cm
2
+/-%
nJ/cm
2
Center-to-center spacing
Aperture width
Pixel area
Fill factor
1
Quantum efficiency
1,2
Responsivity
1,2
Nonuniformity of response
3
Saturation exposure
2
A
FF
QE
R
5
Esat
Saturation charge
4
Qsat
pC
Average dark current
5
Spectral response peak
Spectral response range
6
0.5
pA
nm
nm
λ
Notes:
1. Fill factor, quantum efficiency, and responsivity are related by the equation R = (q
e
λ
/hc)
.
QE
.
FF
.
A, where q
e
is the
charge of an electron and hc/
λ
is the energy of a photon at a given wavelength. Responsivity is therefore given per
pixel.
2. At wavelength of 575 nm (yellow-green) and with no window.
3. Measured at 50% Vsat with an incandescent tungsten lamp filtered with an Schott KG-1 heat-absorbing filter.
4. Saturation charge specified for a video output bias of 4.5 volts.
5. Max dark leakage
≤
1.5 x average dark leakage measured with an integration period of 500 ms at 25
o
C.
6. From 250-1000 nm, responsivity
≥
20% of its peak value.
370 (w/ cap)
130 (w/o cap)
55 (w/ cap)
20 (w/o cap)
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|---|---|
| PI0512HSN | 25-レm-Pitch Wide Aperture Spectroscopic Photodiode Arrays |
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|---|---|
| PI0256WSN | 制造商:AMI 制造商全稱:AMI 功能描述:50-mm-Pitch Wide Aperture Spectroscopic Photodiode Arrays |
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