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參數(shù)資料
| 型號： | PHX6N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 2.8 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 57K |
| 代理商： | PHX6N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
PHX6N60E
Avalanche energy rated
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Ths)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Ths); conditions: VGS ≥ 10 V
Fig.3. Safe operating area. T
hs = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-hs = f(t); parameter D = tp/T
Fig.5. Typical output characteristics.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance.
R
DS(ON) = f(ID); parameter VGS
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
PHX6N60E
1ms
1s
Zth j-hs, Transient thermal impedance (K/W)
1us
10us
100us
10ms 100ms
tp, pulse width (s)
D =
tp
T
P
t
D
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
5
10
15
20
25
30
0
2
4
6
8
10
6 V
6.5 V
PHP6N60E
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
5.5 V
5 V
4.5 V
4 V
10 V
VGS = 20 V
Tj = 25 C
10
100
1000
0.01
0.1
1
10
100
PHX6N60E
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
RDS(ON)
= VDS/ID
100us
1 ms
10ms
0.1s
DC
10 us
tp =
024
68
10
1
1.5
2
2.5
3
3.5
4
6.5 V
10 V
PHP6N60E
ID, Drain current (Amps)
VGS = 20 V
6 V
5.5 V
5 V
4.5 V
Drain-source on resistance, RDS(on) (Ohms)
Tj = 25 C
December 1998
4
Rev 1.200
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