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參數(shù)資料
| 型號： | PHX6N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 2.8 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 57K |
| 代理商： | PHX6N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
PHX6N60E
Avalanche energy rated
Fig.7. Typical transfer characteristics.
I
D = f(VGS); parameter Tj
Fig.8. Typical transconductance.
g
fs = f(ID); parameter Tj
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 2.7 A; VGS = 10 V
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
02
4
6
8
10
0
2
4
6
8
10
PHP6N60E
Gate-source voltage, VGS (V)
Drain current, ID (A)
Tj = 25 C
150 C
VDS > ID x RDS(on)max
-60
-40
-20
0
20
40
60
80
100
120
140
Tj / C
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
02468
10
0
1
2
3
4
5
6
PHP6N60E
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
150 C
VDS > ID x RDS(on)max
0
1
2
3
4
VGS / V
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-40
-20
0
20
40
60
80
100 120 140
Tj / C
Normalised RDS(ON) = f(Tj)
2
1
0
a
0.1
1
10
100
1000
10
100
1000
10000
PHP6N60E
Drain-source voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
December 1998
5
Rev 1.200
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