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參數(shù)資料
| 型號： | PHX4N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 2.4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | FULL PACK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 75K |
| 代理商： | PHX4N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX4N60E
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
hs
= 25C
MIN.
-
TYP. MAX. UNIT
-
4.5
A
T
hs
= 25C
-
-
18
A
I
S
= 4.5 A; V
GS
= 0 V
I
S
= 4.5 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s
-
-
-
-
1.2
-
-
V
ns
μ
C
480
4
December 1998
3
Rev 1.200
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