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參數(shù)資料
| 型號(hào)： | PHT2NQ10T |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | Si, SMALL SIGNAL, FET |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 269K |
| 代理商： | PHT2NQ10T |
Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 16 October 2001
Document order number: 9397 750 08918
Contents
Philips Semiconductors
PHT2NQ10T
N-channel TrenchMOS transistor
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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| PHX5N50E | PowerMOS transistor Isolated version of PHP8N50E |
| PHX6N50E | PowerMOS transistors Avalanche energy rated |
| PHX6N60E | PowerMOS transistors Avalanche energy rated |
| PHX6NA60E | PowerMOS transistors Low capacitance Avalanche energy rated |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHT2NQ10T,135 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHT308C | 制造商:NIEC 制造商全稱(chēng):Nihon Inter Electronics Corporation 功能描述:30A Avg 800 Volts |
| PHT40012 | 制造商:NIEC 制造商全稱(chēng):Nihon Inter Electronics Corporation 功能描述:THYRISTOR MODULE 400A / 1200V to 1600V |
| PHT40012_1 | 制造商:NIEC 制造商全稱(chēng):Nihon Inter Electronics Corporation 功能描述:400A Avg 1200~1600 Volts |
| PHT40016 | 制造商:NIEC 制造商全稱(chēng):Nihon Inter Electronics Corporation 功能描述:THYRISTOR MODULE 400A / 1200V to 1600V |
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