參數(shù)資料
型號(hào)： PHP80N06LT
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： TrenchMOS transistor Logic level FET
中文描述： 75 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 72K
代理商： PHP80N06LT
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP80N06LT, PHB80N06LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 55 V
’Trench’
technology
Very low on-state resistance
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
I
D
= 75 A
R
DS(ON)
≤
14 m
(V
GS
= 5 V)
R
DS(ON)
≤
13 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
N-channelenhancement mode,logic level, field-effectpower transistor in aplastic envelopeusing ’
trench
’technology.
Thedevice has very low on-state resistance. Itis intended for use in dcto dc converters and general purpose switching
applications.
The PHP80N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB80N06LT is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
±
13
75
56
240
178
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin 2 of the SOT404 package.
January 1998
1
Rev 1.300
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP80N06T 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET
PHP82NQ03LT 制造商:NXP Semiconductors 功能描述:MOSFET N 30V TO-220
PHP83N03LT 功能描述:MOSFET TRENCH<=30 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP83N03LT,127 功能描述:MOSFET PHP83N03LT/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP83N06T 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:TrenchMOS Standard Level FET
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