參數(shù)資料
型號: PHP73N06T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 7/14頁
文件大?。?/td> 264K
代理商: PHP73N06T
Philips Semiconductors
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 12 March 2001
7 of 14
9397 750 08107
Philips Electronics N.V. 2001. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 12. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
0
1
2
3
4
5
0
40
80
120
160
Tj (oC)
200
-40
-80
max.
typ
min
VGS(th)
(V)
003aaa077
2%
typ
98%
10-1
10-2
10-3
10-4
10-5
10-6
0
1
2
3
4
5
ID
(A)
VGS(V)
003aaa078
0
20
40
60
80
100
30
25
20
15
10
5
0
(S)
gfs
ID (A)
003aaa089
0
500
1000
1500
2000
2500
3000
3500
Ciss
Coss
Crss
Ciss,
Coss,
Crss
(pF)
VDS (V)
10
102
1
10-1
10-2
003aaa090
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