參數(shù)資料
型號(hào): PHP6N60E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 5.4 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 74K
代理商: PHP6N60E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP6N60E, PHB6N60E
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical switching times t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.15. NormalisXed drain-source breakdown voltage
V
(BR)DSS
/V
(BR)DSS 25 C
= f(T
j
)
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
Fig.17. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
p
);
unclamped inductive load
Fig.18. Maximum permissible repetitive avalanche
current (I
AR
) versus avalanche time (t
p
)
0
10
20
30
40
50
60
0
5
10
15
PHP6N60E
Qg, Gate charge (nC)
VGS, Gate-Source voltage (Volts)
ID = 5.4 A
Tj = 25 C
VDS = 480 V
240 V
120 V
0
0.5
1
1.5
0
2
4
6
8
10
PHP6N60E
VGS = 0V
Source-drain voltage, VSDS (V)
Source-drain diode current, IF (A)
Tj = 25 C
150 C
0
10
20
30
40
50
60
10
100
1000
td(on)
tr
tf
PHP3N60
RG, Gate resistance (Ohms)
Switching times (ns)
VDD = 300 V
VGS = 10 V
Tj = 25 C
RD = 56 Ohms
td(off)
PHP6N60E
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Non-repetitive Avalanche current, IAS (A)
25 C
VDS
ID
tp
Tj prior to avalanche = 125 C
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
PHP6N60E
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Maximum Repetitive Avalanche Current, IAR (A)
125 C
Tj prior to avalanche = 25 C
December 1998
6
Rev 1.300
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