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參數(shù)資料
| 型號： | PHP6N10E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 6.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 53K |
| 代理商： | PHP6N10E |
Philips Semiconductors
Product specification
PowerMOS transistor
PHP6N10E
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance
g
fs
= f(I
D
); parameter T
j
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 5.6 A; V
GS
= 5 V
Fig.10. Gate threshold voltage
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
VGS, Gate-source voltage (Volts)
4
6
8
10
0
1
2
3
4
5
6
7
8
PHP5N10E
Tj = 175 C
ID, Drain current (Amps)
VDS = 30 V
Tj = 25 C
-60
-20
20
60
Tj / C
100
140
180
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
2
4
6
8
10
0
1
2
3
4
PHP5N10E
ID, Drain current (Amps)
gfs, Transconductance (S)
VDD = 30 V
Tj = 25 C
Tj = 175 C
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-20
20
60
100
140
180
Tj / C
Normalised RDS(ON) = f(Tj)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
a
1
10
100
10
100
1000
PHP5N10E
VDS, Drain-source voltage (Volts)
Ciss, Coss, Crss, Junction capacitances (pF)
Crss
Coss
Ciss
March 1997
4
Rev 1.000
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