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參數(shù)資料
| 型號(hào)： | PHP24N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 24 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 54K |
| 代理商： | PHP24N03LT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP24N03LT, PHB24N03LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 30 V
’Trench’
technology
Very low on-state resistance
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
I
D
= 24 A
R
DS(ON)
≤
56 m
(V
GS
= 5 V)
R
DS(ON)
≤
50 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’
trench
’ technology.
Thedevice has very low on-state resistance. Itis intended for use in dcto dc converters and general purpose switching
applications.
The PHP24N03LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB24N03LT is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
30
30
±
13
24
20
96
60
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 5 V
T
mb
= 100 C; V
GS
= 5 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin 2 of the SOT404 package.
January 1998
1
Rev 1.300
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