- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367937 > PHD2N60E (NXP SEMICONDUCTORS) PowerMOS transistors Avalanche energy rated PDF資料下載
參數(shù)資料
| 型號(hào)： | PHD2N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-428, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 94K |
| 代理商： | PHD2N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP2N60E, PHB2N60E, PHD2N60E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
V
DSS
= 600 V
I
D
= 1.9 A
R
DS(ON)
≤
6
GENERAL DESCRIPTION
N-channel,enhancement modefield-effectpower transistor,intendedforusein off-lineswitchedmode powersupplies,
T.V.and computer monitor powersupplies, d.c. tod.c.converters, motor controlcircuits and generalpurpose switching
applications.
The PHP2N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB2N60E is supplied in the SOT404 surface mounting package.
The PHD2N60E is supplied in the SOT428 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
SOT428
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
±
30
1.9
1.2
7.6
50
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
d
g
s
1 2 3
tab
1
3
tab
2
1
2
3
tab
1
It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
August 1998
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHB34NQ10T | N-channel TrenchMOS transistor(N溝道TrenchMOS 晶體管邏輯電平場(chǎng)效應(yīng)管) |
| PHD34NQ10T | N-channel TrenchMOS transistor(N溝道TrenchMOS 晶體管邏輯電平場(chǎng)效應(yīng)管) |
| PHP34NQ10T | N-channel TrenchMOS transistor(N溝道TrenchMOS 晶體管邏輯電平場(chǎng)效應(yīng)管) |
| PHB36N06E | PowerMOS transistor |
| PHB37N06T | TrenchMOS transistor Standard level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHD3055E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor |
| PHD3055E,118 | 功能描述:MOSFET N-CH TRNCH 60V 10.3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHD3055L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| PHD32UAA | 制造商:POWER-ONE 制造商全稱:Power-One 功能描述:PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output |
| PHD32UAY | 制造商:POWER-ONE 制造商全稱:Power-One 功能描述:PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。