- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370000 > PHN210T TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 27V V(BR)DSS | 3.4A I(D) | SO PDF資料下載
參數(shù)資料
| 型號(hào)： | PHN210T |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 27V V(BR)DSS | 3.4A I(D) | SO |
| 中文描述： | 晶體管| MOSFET | MATCHED PAIR | N-CHANNEL | 27V V(BR)DSS | 3.4A I(D) | SO封裝 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | PHN210T |
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
TrenchMOS
TM
transistor
PHN210T
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-a
Thermal resistance junction
to ambient
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
Surface mounted, FR4 board, t
≤
10 sec
TYP.
-
MAX.
62.5
UNIT
K/W
Surface mounted, FR4 board
150
-
K/W
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy (per MOSFET)
CONDITIONS
Unclamped inductive load, I
= 3.4 A;
t
p
= 0.2 ms; T
j
prior to avalanche = 25C;
V
DD
≤
15 V; R
GS
= 50
; V
GS
= 10 V
MIN.
-
MAX.
13
UNIT
mJ
I
AS
Non-repetitive avalanche
current (per MOSFET)
-
3.4
A
ELECTRICAL CHARACTERISTICS
T
j
= 25C, per MOSFET unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 10
μ
A;
MIN.
30
27
1
0.4
-
-
-
-
2
3.5
2
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
2
2.8
-
-
3.2
80
100
120
200
-
170
4.5
-
-
-
-
-
10
100
0.6
10
10
100
6
-
0.7
-
0.7
-
6
-
8
-
21
-
15
-
2.5
-
5
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 150C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 10 V; I
D
= 2.2 A
V
GS
= 4.5 V; I
D
= 1 A
V
GS
= 10 V; I
D
= 2.2 A; T
j
= 150C
V
DS
= 20 V; I
D
= 2.2 A
V
GS
= 10 V; V
DS
= 1 V;
V
GS
= 4.5 V; V
DS
= 5 V
V
DS
= 24 V; V
GS
= 0 V;
V
DS
= 24 V; V
GS
= 0 V; T
j
= 150C
m
m
m
S
A
A
nA
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
g
fs
I
D(ON)
Forward transconductance
On-state drain current
I
DSS
Zero gate voltage drain
current
Gate source leakage current V
GS
=
±
20 V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
s
I
D
= 2.3 A; V
DD
= 15 V; V
GS
= 10 V
V
DD
= 20 V; R
D
= 18
;
V
= 10 V; R
G
= 6
Resistive load
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
250
88
54
-
-
-
pF
pF
pF
March 1999
2
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHN210 | Dual N-channel enhancement mode TrenchMOS transistor |
| PHN220 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 55V V(BR)DSS | 2.6A I(D) | SO |
| PHN405 | 4 N-channel 60 mohm FET array enhancement mode MOS transistors |
| PHN708 | 7 N-channel 80 mohm FET array enhancement mode MOS transistors |
| PHONESENTRY | 10-Bit, 500ksps ADCs in MSOP with Auto Shutdown; Package: SO; No of Pins: 8; Temperature Range: -40°C to +85°C |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHN210T /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHN210T,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHN210T/R | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO |
| PHN210T118 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 3.4A 8-SOIC |
| PHN220 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 55V V(BR)DSS | 2.6A I(D) | SO |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。