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參數(shù)資料
| 型號： | PHN210 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Dual N-channel enhancement mode TrenchMOS transistor |
| 中文描述： | 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 109K |
| 代理商： | PHN210 |
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
TrenchMOS
TM
transistor
PHN210
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C, per MOSFET unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source diode
current (per MOSFET)
I
SM
Pulsed source diode current
(per MOSFET)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
a
= 25 C
MIN.
-
TYP. MAX. UNIT
-
2.2
A
-
-
14
A
I
F
= 1.25 A; V
GS
= 0 V
I
F
= 1.25 A; -dI
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 25 V
-
-
-
0.82
69
55
1.2
-
-
V
ns
nC
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
a
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
a
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-a
= f(t); parameter D = t
p
/T
0
20
40
60
80
100
120
140
Tamb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
PHN210
0.01
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
10 s
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
0
20
40
60
80
100
120
140
Ambient temperature, Tamb (C)
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
PHN210
0.01
0.1
1
10
100
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Peak Pulsed Drain Current, IDM (A)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
February 1999
3
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHN210 /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHN210,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHN210T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel enhancement mode |
| PHN210T /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHN210T,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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