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參數(shù)資料
| 型號(hào)： | PHF14NQ20T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220, FPAK-3 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 68K |
| 代理商： | PHF14NQ20T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX14NQ20T , PHF14NQ20T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 14 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
AV
);
unclamped inductive load
0
2
4
6
8
10
12
14
0
10
20
30
40
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
VDD = 160 V
VDD = 40 V
0.1
1
10
100
0.001
0.01
0.1
1
10
Avalanche time, t
AV
(ms)
Maximum Avalanche Current, I
AS
(A)
Tj prior to avalanche = 150 C
25 C
0
10
20
30
0.0
0.2
0.4
Source-Drain Voltage, VSDS (V)
1.2
1.4
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
November 2000
6
Rev 1.100
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