- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369995 > PF48F4444PPVBQ0 (INTEL CORP) Intel StrataFlash Embedded Memory PDF資料下載
參數(shù)資料
| 型號： | PF48F4444PPVBQ0 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | Intel StrataFlash Embedded Memory |
| 中文描述： | 64M X 16 FLASH 1.8V PROM, 88 ns, PBGA80 |
| 封裝： | 11 X 11 MM, 1.40 MM HEIGHT, LEAD FREE, SCSP-88/80 |
| 文件頁數(shù)： | 32/102頁 |
| 文件大小： | 1609K |
| 代理商： | PF48F4444PPVBQ0 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁當(dāng)前第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁
1-Gbit P30 Family
April 2005
32
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
6.2
DC Voltage Characteristics
I
PPW
V
PP
Program Current
0.05
0.10
0.05
0.10
mA
V
PP
= V
PPL,
program in progress
V
PP
= V
PPH,
program in progress
8
22
8
22
I
PPE
V
PP
Erase Current
0.05
0.10
0.05
0.10
mA
V
PP
= V
PPL,
erase in progress
8
22
8
22
V
PP
= V
PPH,
erase in progress
Notes:
1.
2.
3.
4.
5.
6.
7.
All currents are RMS unless noted. Typical values at typical V
, T
= +25 °C.
I
is the average current measured over any 5 ms time interval 5 μs after CE# is deasserted.
Sampled, not 100% tested.
V
CC
read + program current is the sum of V
read and V
program currents.
V
CC
read + erase current is the sum of V
read and V
erase currents.
I
CCES
is specified with the device deselected. If device is read while in erase suspend, current is I
plus I
.
I
, I
CCE
measured over typical or max times specified in
Section 7.5, “Program and Erase Characteristics” on
page 45
Table 13. DC Voltage Characteristics
Sym
Parameter
CMOS Inputs
(V
CCQ
= 1.7 V - 3.6 V)
TTL Inputs
(1)
(V
CCQ
= 2.4 V - 3.6 V)
Unit
Test Condition
Notes
Min
Max
Min
Max
V
IL
Input Low Voltage
0
0.4
0
0.6
V
2
V
IH
Input High Voltage
V
CCQ
– 0.4
V
CCQ
2.0
V
CCQ
V
V
OL
Output Low Voltage
-
0.1
-
0.1
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OL
V
OH
Output High Voltage
V
CCQ
– 0.1
-
V
CCQ
– 0.1
-
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OH
V
PPLK
V
PP
Lock-Out Voltage
-
0.4
-
0.4
V
3
V
LKO
V
CC
Lock Voltage
1.0
-
1.0
-
V
V
LKOQ
V
CCQ
Lock Voltage
0.9
-
0.9
-
V
NOTES:
1.
2.
3.
Synchronous read mode is not supported with TTL inputs.
V
IL
can undershoot to –0.4 V and V
can overshoot to V
+ 0.4 V for durations of 20 ns or less.
V
PP
≤
V
PPLK
inhibits erase and program operations. Do not use V
PPL
and V
PPH
outside their valid ranges.
Table 12. DC Current Characteristics (Sheet 2 of 2)
Sym
Parameter
CMOS
Inputs
(V
=
1.7 V - 3.6 V)
TTL Inputs
(V
CCQ
=
2.4 V - 3.6 V)
Unit
Test Conditions
Notes
Typ
Max
Typ
Max
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PF48F2P0VBQ0 | Intel StrataFlash Embedded Memory |
| PF48F3P0VBQ0 | Intel StrataFlash Embedded Memory |
| PF48F4P0VBQ0 | Intel StrataFlash Embedded Memory |
| PF48F0P0VB00 | Intel StrataFlash Embedded Memory |
| PF48F2P0VB00 | Intel StrataFlash Embedded Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PF48F4444PPVTQ0 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| PF48F4P0VB00 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| PF48F4P0VBQ0 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| PF48F4P0VT00 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| PF48F4P0VTQ0 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。