- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369995 > PF48F3P0ZB00 (Intel Corp.) Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號： | PF48F3P0ZB00 |
| 廠商： | Intel Corp. |
| 英文描述： | Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes |
| 中文描述： | 英特爾StrataFlash嵌入式存儲器 |
| 文件頁數(shù)： | 7/102頁 |
| 文件大小： | 1609K |
| 代理商： | PF48F3P0ZB00 |
第1頁第2頁第3頁第4頁第5頁第6頁當(dāng)前第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
7
1.0
Introduction
This document provides information about the Intel StrataFlash Embedded Memory (P30) device
and describes its features, operation, and specifications.
1.1
Nomenclature
1.2
Acronyms
1.8 V :
V
CC
(core) voltage range of 1.7 V – 2.0 V
V
CCQ
(I/O) voltage range of 1.7 V – 3.6 V
V
PP
voltage range of 8.5 V – 9.5 V
3.0 V :
9.0 V :
Block :
A group of bits, bytes,1-Gbit P30 Family or words within the
flash memory array that erase simultaneously when the Erase
command is issued to the device. The 1-Gbit P30 Family has
two block sizes: 32-KByte and 128-KByte.
Main block :
An array block that is usually used to store code and/or data.
Main blocks are larger than parameter blocks.
Parameter block :
An array block that is usually used to store frequently changing
data or small system parameters that traditionally would be
stored in EEPROM.
Top parameter device :
A device with its parameter blocks located at the highest
physical address of its memory map.
Bottom parameter device :
A device with its parameter blocks located at the lowest
physical address of its memory map.
BEFP :
Buffer Enhanced Factory Programming
CUI :
Command User Interface
MLC :
Multi-Level Cell
OTP :
One-Time Programmable
PLR :
Protection Lock Register
PR :
Protection Register
RCR :
Read Configuration Register
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PF48F4P0ZB00 | Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes |
| PF48F0P0VBQ0 | Intel StrataFlash Embedded Memory |
| PF48F4444PPVBQ0 | Intel StrataFlash Embedded Memory |
| PF48F2P0VBQ0 | Intel StrataFlash Embedded Memory |
| PF48F3P0VBQ0 | Intel StrataFlash Embedded Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PF48F3P0ZBQ0 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| PF48F3P0ZT00 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| PF48F3P0ZTQ0 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| PF48F4000M0Y0CEA | 制造商:Micron Technology Inc 功能描述:256BA/0BA SCSP 1.8 X16C HF - Trays |
| PF48F4000P0ZB | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Micron Parallel NOR Flash Embedded Memory (P30-65nm) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。