參數(shù)資料
型號(hào): PF48F3P0ZB00
廠商: Intel Corp.
英文描述: Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
中文描述: 英特爾StrataFlash嵌入式存儲(chǔ)器
文件頁(yè)數(shù): 66/102頁(yè)
文件大小: 1609K
代理商: PF48F3P0ZB00
1-Gbit P30 Family
April 2005
66
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
When a programming operation is executing, issuing the Program Suspend command requests the
WSM to suspend the programming algorithm at predetermined points. The device continues to
output Status Register data after the Program Suspend command is issued. Programming is
suspended when Status Register bits SR[7,2] are set. Suspend latency is specified in
Section 7.5,
“Program and Erase Characteristics” on page 45
.
To read data from the device, the Read Array command must be issued. Read Array, Read Status
Register, Read Device Identifier, CFI Query, and Program Resume are valid commands during a
program suspend.
During a program suspend, deasserting CE# places the device in standby, reducing active current.
V
PP
must remain at its programming level, and WP# must remain unchanged while in program
suspend. If RST# is asserted, the device is reset.
11.5
Program Resume
The Resume command instructs the device to continue programming, and automatically clears
Status Register bits SR[7,2]. This command can be written to any address. If error bits are set, the
Status Register should be cleared before issuing the next instruction. RST# must remain deasserted
(see
Figure 41, “Program Suspend/Resume Flowchart” on page 86
).
11.6
Program Protection
When V
PP
= V
IL
, absolute hardware write protection is provided for all device blocks. If V
PP
is at
or below V
PPLK
, programming operations halt and SR[3] is set indicating a V
PP
-level error. Block
lock registers are not affected by the voltage level on V
PP
; they may still be programmed and read,
even if V
PP
is less than V
PPLK
.
Figure 31.
Example VPP Supply Connections
Factory Programming with
V
PP
= V
PPH
Complete write/Erase Protection when
V
PP
V
PPLK
VCC
VPP
VCC
VPP
Low Voltage and Factory Programming
Low-voltage Programming only
Logic Control of Device Protection
VCC
VPP
Low Voltage Programming Only
Full Device Protection Unavailable
VCC
VPP
10K
V
PP
V
CC
V
CC
PROT #
V
CC
V
PP
=V
PPH
V
CC
相關(guān)PDF資料
PDF描述
PF48F4P0ZB00 Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
PF48F0P0VBQ0 Intel StrataFlash Embedded Memory
PF48F4444PPVBQ0 Intel StrataFlash Embedded Memory
PF48F2P0VBQ0 Intel StrataFlash Embedded Memory
PF48F3P0VBQ0 Intel StrataFlash Embedded Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PF48F3P0ZBQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F3P0ZT00 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F3P0ZTQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F4000M0Y0CEA 制造商:Micron Technology Inc 功能描述:256BA/0BA SCSP 1.8 X16C HF - Trays
PF48F4000P0ZB 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Micron Parallel NOR Flash Embedded Memory (P30-65nm)