參數(shù)資料
型號: PF48F2P0ZB00
廠商: Intel Corp.
英文描述: Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
中文描述: 英特爾StrataFlash嵌入式存儲器
文件頁數(shù): 45/102頁
文件大?。?/td> 1609K
代理商: PF48F2P0ZB00
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
45
7.5
Program and Erase Characteristics
Num
Symbol
Parameter
V
PPL
V
PPH
Units Notes
Min
Typ
Max
Min
Typ
Max
Conventional Word Programming
W200 t
PROG/W
Program
Time
Single word
Single cell
-
-
90
30
200
60
-
-
85
30
190
60
μs
1
Buffered Programming
W200 t
PROG/W
W251 t
BUFF
Buffered Enhanced Factory Programming
W451 t
BEFP/W
Program
W452
Setup
Erasing and Suspending
W500 t
ERS/PB
Erase Time128-KByte Main
W501 t
ERS/MB
W600 t
SUSP/P
Suspend
Latency
W601 t
SUSP/E
Notes:
1.
Typical values measured at T
= +25 °C and nominal voltages. Performance numbers are valid for all
speed versions. Excludes system overhead. Sampled, but not 100% tested.
2.
Averaged over entire device.
Program
Time
Single word
32-word buffer
-
-
90
440
200
880
-
-
85
340
190
680
μs
1
Single word
n/a
n/a
n/a
-
10
-
μs
1,2
t
BEFP/
BEFP Setup
n/a
n/a
n/a
5
-
-
1
-
-
-
-
0.4
1.2
20
20
2.5
4.0
25
25
-
-
-
-
0.4
1.0
20
20
2.5
4.0
25
25
s
1
Program suspend
Erase suspend
μs
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PDF描述
PF48F3P0ZB00 Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
PF48F4P0ZB00 Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
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PF48F3000P0ZBQ0A 功能描述:IC FLASH 128MBIT 85NS 88TPBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ