參數(shù)資料
型號： PF48F2P0ZB00
廠商： Intel Corp.
英文描述： Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
中文描述： 英特爾StrataFlash嵌入式存儲器
文件頁數(shù)： 41/102頁
文件大?。?/td> 1609K
代理商： PF48F2P0ZB00
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
41
Note:
WAIT is driven per OE# assertion during synchronous array or non-array read. WAIT asserted during
initial latency and deasserted during valid data (RCR[10] = 0, Wait asserted low).
7.4
AC Write Specifications
Figure 21.
Synchronous Burst-Mode Four-Word Read Timing
y
A
Q0
Q1
Q2
Q3
R307
R10
R304
R305
R304
R4
R7
R17
R15
R9
R8
R303
R3
R106
R102
R105
R101
R2
R306
R302
R301
CLK [C]
Address [A]
ADV# [V]
CE# [E]
OE# [G]
WAIT [T]
Data [D/Q]
Table 18.
AC Write Specifications (Sheet 1 of 2)
Num
Symbol
Parameter
Min
Max
Units
Notes
W1
t
PHWL
RST# high recovery to WE# low
150
-
ns
1,2,3
W2
t
ELWL
CE# setup to WE# low
0
-
ns
1,2,3
W3
t
WLWH
WE# write pulse width low
50
-
ns
1,2,4
W4
t
DVWH
Data setup to WE# high
50
-
ns
1,2
W5
t
AVWH
Address setup to WE# high
50
-
ns
W6
t
WHEH
CE# hold from WE# high
0
-
ns
W7
t
WHDX
Data hold from WE# high
0
-
ns
W8
t
WHAX
Address hold from WE# high
0
-
ns
W9
t
WHWL
WE# pulse width high
20
-
ns
1,2,5
W10
t
VPWH
V
PP
setup to WE# high
V
PP
hold from Status read
200
-
ns
1,2,3,7
W11
t
QVVL
0
-
ns
W12
t
QVBL
WP# hold from Status read
0
-
ns
1,2,3,7
W13
t
BHWH
WP# setup to WE# high
200
-
ns
相關(guān)PDF資料
PDF描述
PF48F3P0ZB00 Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
PF48F4P0ZB00 Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
PF48F0P0VBQ0 Intel StrataFlash Embedded Memory
PF48F4444PPVBQ0 Intel StrataFlash Embedded Memory
PF48F2P0VBQ0 Intel StrataFlash Embedded Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PF48F2P0ZBQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F2P0ZT00 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F2P0ZTQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F3000P0ZBQ0 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
PF48F3000P0ZBQ0A 功能描述:IC FLASH 128MBIT 85NS 88TPBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
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