參數(shù)資料
型號： PF48F0P0ZB00
廠商： Intel Corp.
英文描述： Intel StrataFlash Embedded Memory
中文描述： 英特爾StrataFlash嵌入式存儲器
文件頁數(shù)： 37/102頁
文件大?。?/td> 1609K
代理商： PF48F0P0ZB00
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
37
R101
t
AVVH
Address setup to ADV# high
10
-
ns
1
R102
t
ELVH
CE# low to ADV# high
10
-
ns
R103
t
VLQV
ADV# low to output valid
Vcc = 1.8 V
– 2.0 V
-
85
ns
Vcc = 1.7 V
– 2.0 V
-
88
R104
t
VLVH
ADV# pulse width low
10
-
ns
R105
t
VHVL
ADV# pulse width high
10
-
ns
R106
t
VHAX
Address hold from ADV# high
9
-
ns
1,4
R108
t
APA
Page address access
-
25
ns
1
R111
t
phvh
RST# high to ADV# high
30
-
ns
Clock Specifications
R200
f
CLK
CLK frequency
-
40
MHz
1,3,6
R201
t
CLK
CLK period
25
-
ns
R202
t
CH/CL
CLK high/low time
5
-
ns
R203
t
FCLK/RCLK
CLK fall/rise time
-
3
ns
Synchronous Specifications
R301
t
AVCH/L
Address setup to CLK
9
-
ns
1
R302
t
VLCH/L
ADV# low setup to CLK
9
-
ns
R303
t
ELCH/L
CE# low setup to CLK
9
-
ns
R304
t
CHQV
/ t
CLQV
CLK to output valid
-
20
ns
R305
t
CHQX
Output hold from CLK
3
-
ns
1,5
R306
t
CHAX
Address hold from CLK
10
-
ns
1,4,5
R307
t
CHTV
CLK to WAIT valid
-
20
ns
1,5
R311
t
CHVL
CLK Valid to ADV# Setup
3
-
ns
1
R312
t
CHTX
WAIT Hold from CLK
3
-
ns
1,5
NOTES:
1.
See
Figure 13, “AC Input/Output Reference Waveform” on page 33
for timing measurements and max allowable input
slew rate.
OE# may be delayed by up to t
ELQV
– t
GLQV
after CE#’s falling edge without impact to t
ELQV
.
Sampled, not 100% tested.
Address hold in synchronous burst mode is t
or t
VHAX
, whichever timing specification is satisfied first.
Applies only to subsequent synchronous reads.
See your local Intel representative for designs requiring higher than 40 MHz synchronous operation.
2.
3.
4.
5.
6.
Table 17.
AC Read Specifications for 256/512-Mbit and 1-Gbit Densities (Sheet 2 of 2)
Num
Symbol
Parameter
Speed
Min
Max
Unit
Notes
相關PDF資料
PDF描述
PF48F2P0ZB00 Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
PF48F3P0ZB00 Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
PF48F4P0ZB00 Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
PF48F0P0VBQ0 Intel StrataFlash Embedded Memory
PF48F4444PPVBQ0 Intel StrataFlash Embedded Memory
相關代理商/技術參數(shù)
參數(shù)描述
PF48F0P0ZBQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F0P0ZT00 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F0P0ZTQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F2000P0ZBQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F2000P0ZBQ0A 功能描述:IC FLASH 64MBIT 85NS 88TPBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
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