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| 型號： | PF08114B |
| 文件頁數(shù)： | 3/44頁 |
| 文件大?。?/td> | 217K |
| 代理商： | PF08114B |
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PF08107B
Rev.7, Dec. 2001, page 3 of 44
Electrical Characteristics for E-GSM mode
(Tc = 25
°
C)
Test conditions unless otherwise noted:
f = 880 to 915 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50
, Tc = 25
°
C,
Pulse operation with pulse width 577
μ
s and duty cycle 1:8 shall be used.
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
F
880
915
MHz
Band select (GSM active)
Vctl
2.0
2.8
V
Input power
Pin
–2
0
2
dBm
Control voltage range
Vapc
0.2
2.2
V
Supply voltage
Vdd
3.0
3.5
4.5
V
Total efficiency
η
T
43
50
%
2nd harmonic distortion
2nd H.D.
45
35
dBc
3rd harmonic distortion
3rd H.D.
45
35
dBc
4th~8th harmonic distortion
4th~8th H.D.
35
dBc
Input VSWR
VSWR (in)
1.5
3
Pout
GSM
= 35 dBm,
Vapc = controlled
Output power (1)
Pout (1)
35.0
36.0
dBm
Vapc = 2.2 V
Output power (2)
Pout (2)
33.5
34.5
dBm
Vdd = 3.1 V, Vapc = 2.2 V,
Tc = +70°C
Isolation
42
37
dBm
Vapc = 0.2 V, Pin = 2 dBm
Isolation at
DCS RF-output
when GSM is active
30
20
dBm
Pout
GSM
= 35 dBm,
Measured at f = 1760 to 1830 MHz
Switching time
t
r
, t
f
1
2
μ
s
Pout
GSM
= 0 to 35.0 dBm
Stability
No parasitic oscillation
Vdd = 3.1 to 4.5 V, Pout
≤
35.0 dBm,
Vapc
GSM
≤
2.2 V,
Rg = 50
, Tc = 25
°
C,
Output VSWR = 6 : 1 All phases
Load VSWR tolerance
No degradation
Vdd = 3.1 to 4.5 V,
Pout
GSM
≤
35.0 dBm,
Vapc
GSM
≤
2.2 V,
Rg = 50
, t = 20
sec., Tc = 25°C,
Output VSWR = 10 : 1 All phases
Pnoise1
80
dBm
f
0
= 915 MHz, f
rx
= f
0
+10 MHz,
Pout
GSM
= 35 dBm,
RES BW = 100 kHz
Noise power
Pnoise2
84
dBm
f
0
= 915
MHz, f
rx
= f
0
+20
MHz,
Pout
GSM
= 35
dBm,
RES BW = 100
kHz
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