參數(shù)資料
型號(hào): PF08114B
文件頁數(shù): 21/44頁
文件大小: 217K
代理商: PF08114B
PF08107B
Rev.7, Dec. 2001, page 21 of 44
Frequency vs Pout, Efficiency – Vdd Dependence
E
33
33.5
34
34.5
35
35.5
36
36.5
37
37.5
880
890
Frequency (MHz)
900
910
920
P
GSM Pout vs. Frequency
Vapc = 2.2 V,
Pin = 0 dBm,
Zg = Zl = 50
,
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
880
890
Frequency (MHz)
900
910
920
GSM Efficiency vs. Frequency
30
35
40
45
50
55
60
Vapc = 2.2 V,
Pin = 0 dBm,
Zg = Zl = 50
,
Vdd = 3.5 V
Vdd = 3.2 V
Vdd = 3.0 V
相關(guān)PDF資料
PDF描述
PF08122B
PF08123B
PF251 25Amp Fast Recover Rectifier 50 to 1000 Volts
PF252 25Amp Fast Recover Rectifier 50 to 1000 Volts
PF253 25Amp Fast Recover Rectifier 50 to 1000 Volts
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PF08122B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
PF08123B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
PF08127B 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
PF08134B 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone
PF0830NL 制造商:Pulse Electronics Corporation 功能描述:- Trays