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參數(shù)資料
| 型號： | PF08103B |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊，電子GSM900和DCS1800和雙頻手持電話 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 34K |
| 代理商： | PF08103B |
PF08103B
4
Electrical Characteristics for GSM900 mode
(Tc = 25
°
C)
Test conditions unless otherwise noted:
f = 880 to 915MHz, V
DD1
= V
DD2
= 3.5V, Pin = +1dBm, V
CTL
= 2.0V, V
CTL
= 0.1V, Rg = Rl = 50
,
Tc = 25
°
C, Pulse operation with pulse width 577
μ
s and duty cycle 1:8 shall be used.
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
880
915
MHz
Control voltage range
Vapc
0.2
2.2
V
Total efficiency
η
T
40
45
%
Pout
GSM
= 35dBm,
2nd harmonic
distortion
2nd H.D.
45
35
dBc
Vapc = controlled
3rd harmonic distortion
3rd H.D.
45
35
dBc
4th~8th harmonic distortion
4th~8th H.D.
35
dBc
Input VSWR
VSWR (in)
1.5
3.5
Output power (1)
Pout (1)
35.0
36.0
dBm
Vapc = 2.2V
Output power (2)
Pout (2)
33.5
34.2
dBm
V
DD
= 3.0V, Vapc = 2.2V,
Tc = +85
°
C
Isolation
45
37
dBm
Vapc = 0.2 V
Isolation at
DCS RF-output
when GSM is active
30
20
dBm
Pout
GSM
= 35dBm (GSM mode)
Measured at f = 1760 to 1830MHz,
Pin(GSM) = +1dBm
Switching time
t
r
, t
f
1
2
μ
s
Pout
GSM
= 0 to 35.0dBm
V
DD
= 3 to 5.1V, Pout
≤
35.0dBm,
Vapc
GSM
≤
2.2V GSM pulse.
Rg = 50
, Tc = 25
°
C,
Output VSWR = 6 : 1 All phases
Stability
No parasitic oscillation
Load VSWR tolerance
No degradation
V
DD
= 3 to 5.1V, Pout
GSM
≤
35.0dBm,
Vapc
GSM
≤
2.2V GSM pulse.
Rg = 50
, t = 20sec., Tc = 25
°
C,
Output VSWR = 10 : 1 All phases
Noise power
Pnoise1
80
dBm
f
0
= 915MHz, f
rx
= f
0
+10MHz
Pout
GSM
= 35dBm, RES BW = 100kHz
Pnoise2
84
dBm
f
0
= 915MHz, f
rx
= f
0
+20MHz
Pout
GSM
= 35dBm, RES BW = 100kHz
Slope Pout/Vapc
200
dB/V
Pout
GSM
= 0 to 35dBm
Phase shift
20
deg/
dB
Pout
GSM
= 34 to 35dBm
Total conversion gain1
5
dB
f
0
= 915MHz, (Pin = +1dBm)
Other sig. = 895MHz (Pin =
40dBc)
Pout
GSM
= 33.5dBm
Total conversion gain2
5
dB
f
0
= 915MHz, (Pin = +1dBm)
Other sig. = 905MHz (Pin =
40dBc)
Pout
GSM
= 33.5dBm
AM output
20
%
Pout
GSM
= +5dBm,
4%AM modulation at input
50kHz modulation frequency
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