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參數(shù)資料
| 型號： | PF01411B |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM Handy Phone |
| 中文描述： | 場效應晶體管功率放大器模塊，電子的GSM手持電話 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 26K |
| 代理商： | PF01411B |
PF01411B
2
Electrical Characteristics
(Tc = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
880
—
915
MHz
Control voltage range
V
APC
I
DS
0.5
—
2.2
V
Drain cutoff current
—
—
100
μ
A
V
DD
= 8V, V
APC
= 0V
Total efficiency
η
T
40
45
—
%
Pin = 0dBm, V
DD
= 3.5V,
2nd harmonic distortion
2nd H.D.
—
–45
–35
dBc
Pout = 35.5dBm, Vapc = control
3rd harmonic distortion
3rd H.D.
—
–45
–35
dBc
R
L
= Rg = 50
, Tc = 25
°
C
Input VSWR
VSWR (in)
—
1.5
3
—
Output power (1)
Pout (1)
35.5
36.0
—
dBm
Pin = 0dBm, V
DD
= 3.5V,
V
APC
= 2.2V, R
L
= Rg = 50
,
Tc = 25
°
C
Output power (2)
Pout (2)
33.5
34.2
—
dBm
Pin = 0dBm, V
DD
= 3.0V,
V
APC
= 2.2V, R
L
= Rg = 50
,
Tc = 85
°
C
Isolation
—
—
–40
–36
dBm
Pin = 0dBm, V
DD
= 3.5V,
V
APC
= 0.5V, R
L
= Rg = 50
,
Tc = 25
°
C
Switching time
tr, tf
—
1
2
μ
s
Pin = 0dBm, V
= 3.5V,
Pout = 0 to 35.5dBm
R
L
= Rg = 50
, Tc = 25
°
C
Stability
—
No parasitic oscillation
—
Pin = 0dBm, V
DD
= 3 to 5.1V,
Pout
≤
35.5dBm,
Vapc
≤
2.2V GSM pulse.
Rg = 50
, Tc = 25
°
C,
Output VSWR = 6 : 1 All phases
Pin = 0dBm, V
DD
= 3 to 5.1V,
Pout
≤
35.5dBm,
Vapc
≤
2.2V GSM pulse.
Rg = 50
, t = 20sec., Tc = 25
°
C,
Output VSWR = 10 : 1 All phases
Load VSWR tolerance
—
No degradation
—
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