參數(shù)資料
型號(hào): PESD3V3V4UK,132
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 25 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝: 1 X 1 MM, 0.50 MM HEIGHT, ULTRA SMALL, LEADLESS, PLASTIC PACKAGE-6
文件頁(yè)數(shù): 9/15頁(yè)
文件大小: 502K
代理商: PESD3V3V4UK,132
PESDXV4UK_SER
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 25 August 2010
3 of 15
NXP Semiconductors
PESDxV4UK series
Very low capacitance unidirectional quadruple ESD protection arrays
5.
Limiting values
[1]
Non-repetitive current pulse 8/20
μs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1, 3, 4, or 6 to pin 2.
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1, 3, 4 or 6 to pin 2.
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
PPP
peak pulse power
tp =8/20 μs
PESD3V3V4UK
PESD5V0V4UK
-25
W
PESD9V0V4UK
-
28
W
IPP
peak pulse current
tp =8/20 μs
PESD3V3V4UK
-
2.7
A
PESD5V0V4UK
-
2.5
A
PESD9V0V4UK
-
1.5
A
Per device
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
55
+150
°C
Tstg
storage temperature
65
+150
°C
Table 6.
ESD maximum ratings
Tamb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
PESD3V3V4UK
-
10
kV
PESD5V0V4UK
-
15
kV
PESD9V0V4UK
-
8
kV
PESDxV4UK series
machine model
400
V
PESDxV4UK series
MIL-STD-883 (human
body model)
-8
kV
Table 7.
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
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