參數(shù)資料
型號： PCF8591T-T
廠商： NXP SEMICONDUCTORS
元件分類： 模擬信號調(diào)理
英文描述： SPECIALTY ANALOG CIRCUIT, PDSO16
封裝： 7.50 MM, PLASTIC, SOT162-1, SO-16
文件頁數(shù)： 9/28頁
文件大?。?/td> 139K
代理商： PCF8591T-T
2003 Jan 27
17
Philips Semiconductors
Product specication
8-bit A/D and D/A converter
PCF8591
12 D/A CHARACTERISTICS
VDD = 5.0 V; VSS =0V; VREF = 5.0 V; VAGND =0V; RL =10k;CL = 100 pF; Tamb = 40 °C to +85 °C unless otherwise
specied.
13 A/D CHARACTERISTICS
VDD = 5.0 V; VSS =0V; VREF = 5.0 V; VAGND =0V; RS =10k; Tamb = 40 °C to +85 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Analog output
VOA
output voltage
no resistive load
VSS
VDD
V
RL =10k
VSS
0.9
× V
DD
V
ILO
output leakage current
AOUT disabled
250
nA
Accuracy
OSe
offset error
Tamb =25 °C
50
mV
Le
linearity error
±1.5
LSB
Ge
gain error
no resistive load
1%
tDAC
settling time
to 1
2 LSB full scale step
90
s
fDAC
conversion rate
11.1
kHz
SNRR
supply noise rejection ratio
f = 100 Hz;
VDDN = 0.1 × VPP
40
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Analog inputs
VIA
analog input voltage
VSS
VDD
V
ILIA
analog input leakage current
100
nA
CIA
analog input capacitance
10
pF
CID
differential input capacitance
10
pF
VIS
single-ended voltage
measuring range
VAGND
VREF
V
VID
differential voltage
measuring range;
VFS =VREF VAGND
V
Accuracy
OSe
offset error
Tamb =25 °C
20
mV
Le
linearity error
±1.5
LSB
Ge
gain error
1%
GSe
small-signal gain error
Vi = 16 LSB
5%
CMRR
common-mode rejection ratio
60
dB
SNRR
supply noise rejection ratio
f = 100 Hz;
VDDN = 0.1 × VPP
40
dB
tADC
conversion time
90
s
fADC
sampling/conversion rate
11.1
kHz
V
FS
–
2
-------------
+V
FS
2
--------------
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