參數(shù)資料
型號(hào)： PC28F128J3A-125
廠商： Intel Corp.
英文描述： Intel StrataFlash Memory (J3)
中文描述： 英特爾StrataFlash存儲(chǔ)器（J3）
文件頁數(shù)： 20/72頁
文件大?。?/td> 905K
代理商： PC28F128J3A-125
256-Mbit J3 (x8/x16)
20
Datasheet
6.2
DC Voltage Characteristics
I
CCE
V
CC
Block Erase or Clear
Block Lock-Bits Current
35
70
mA
CMOS Inputs, V
PEN
= V
CC
1,4
40
80
mA
TTL Inputs, V
PEN
= V
CC
I
CCWS
I
CCES
V
CC
Program Suspend or
Block Erase Suspend
Current
10
mA
Device is enabled (see
Table 13
)
1,5
NOTES:
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and
speeds). Contact Intel’s Application Support Hotline or your local sales office for information about typical
specifications.
2. Includes STS.
3. CMOS inputs are either V
CC
± 0.2 V or GND ± 0.2 V. TTL inputs are either V
IL
or V
IH
.
4. Sampled, not 100% tested.
5. I
CCWS
and I
CCES
are specified with the device selected. If the device is read or written while in erase suspend
mode, the device’s current draw is I
CCR
and I
CCWS
Table 7. DC Voltage Characteristics
Symbol
Parameter
Min
Max
Unit
Test Conditions
Notes
V
IL
Input Low Voltage
–0.5
0.8
V
2, 6
V
IH
Input High Voltage
2.0
V
+ 0.5
V
2,6
V
OL
Output Low Voltage
0.4
V
V
CCQ
= V
CCQ
Min
I
OL
V
CCQ
= V
CCQ
Min
I
OL
1,2
0.2
V
V
OH
Output High Voltage
0.85
×
V
CCQ
V
V
CCQ
= V
Min
I
OH
= –2.5 mA
1,2
V
–
0.2
V
V
CCQ
= V
Min
I
OH
= –100 μA
V
PENLK
V
Lockout during Program,
Erase and Lock-Bit Operations
2.2
V
2,3,4,7
Table 6. DC Current Characteristics (Sheet 2 of 2)
VCCQ
2.7 - 3.6V
Test Conditions
Notes
VCC
2.7 - 3.6V
Symbol
Parameter
Typ
Max
Unit
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