參數(shù)資料
型號: PBSS5140D
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: KPT 15C 14#20 1#16 PIN PLUG
中文描述: 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SC-74, 6 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 61K
代理商: PBSS5140D
2001 Nov 15
2
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
PBSS5140D
FEATURES
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat
generation.
APPLICATIONS
General purpose switching and muting
LCD back-lighting
Supply line switching circuits
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
PNP low V
CEsat
transistor in an SC-74 (SOT457) plastic
package.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
PBSS5140D
51
SYMBOL
PARAMETER
MAX.
40
1
2
<500
UNIT
V
CEO
I
C
I
CM
R
CEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
V
A
A
m
PIN
DESCRIPTION
1
2
3
4
5
6
collector
collector
base
n.c.
collector
emitter
handbook, halfpage
MAM458
Top view
1, 2, 5
6
3
1
3
2
4
5
6
Fig.1
Simplified outline (SC-74; SOT457) and
symbol.
LIMITING VALUES
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
40
40
5
1
2
1
460
+150
150
+150
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
V
V
V
A
A
A
mW
°
C
°
C
°
C
T
amb
25
°
C; note 1
相關(guān)PDF資料
PDF描述
PBSS5140S KPT 15C 14#20 1#16 SKT PLUG
PBW-1201 KPTC 6C 6#20 PIN RECP
PBW-1201-33 KPTC 6C 6#20 PIN RECP
PBW-1202-33 KPTC2E10-6S
PBW-1203-33 KPTC 6C 6#20 SKT RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PBSS5140S 制造商:NXP Semiconductors 功能描述:PNP transistor,1A TO92 PBSS5140S
PBSS5140S,126 功能描述:兩極晶體管 - BJT TRANS BISS AMMO LARGE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS5140T 制造商:NXP Semiconductors 功能描述:TRANSISTOR PNP SOT-23
PBSS5140T T/R 功能描述:兩極晶體管 - BJT PNP 40V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS5140T,215 功能描述:兩極晶體管 - BJT PNP 40V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2