參數(shù)資料
型號: PBSS4140S
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: KPTC 3C 3#20 PIN RECP
中文描述: 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43A, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 60K
代理商: PBSS4140S
2001 Nov 27
2
Philips Semiconductors
Product specification
40 V low V
CEsat
NPN transistor
PBSS4140S
FEATURES
High power dissipation (830 mW)
Ultra low collector-emitter saturation voltage
1 A continuous current
High current switching
Improved device reliability due to reduced heat
generation.
APPLICATIONS
Medium power switching and muting
Linear regulators
DC/DC converter
LCD back-lighting
Supply line switching circuits
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT54 plastic package.
PNP complement: PBSS5140S.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
PBSS4140S
S4140S
SYMBOL
PARAMETER
MAX.
UNIT
V
CEO
I
C
I
CM
R
CEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
40
1
2
<500
V
A
A
m
PIN
DESCRIPTION
1
2
3
base
collector
emitter
handbook, halfpage
1
3
2
MAM459
2
1
3
Fig.1 Simplified outline (SOT54) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
40
40
5
1
2
1
830
+150
150
+150
V
V
V
A
A
A
mW
°
C
°
C
°
C
T
amb
25
°
C; note 1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PBSS4140S,126 功能描述:兩極晶體管 - BJT TRANS BISS AMMO LARGE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS4140T 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-23 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, SOT-23 制造商:NXP Semiconductors 功能描述:NPN Transistor 1A SOT23,PBSS4140T
PBSS4140T /T3 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS4140T,215 功能描述:兩極晶體管 - BJT NPN 40V 1000MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS4140T,235 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2