參數(shù)資料
型號(hào)： PA28F002BC-T120
廠商： INTEL CORP
元件分類： PROM
英文描述： 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY
中文描述： 256K X 8 FLASH 12V PROM, 120 ns, PDSO44
封裝： 0.525 X 1.110 INCH, PLASTIC, SOP-44
文件頁(yè)數(shù)： 10/37頁(yè)
文件大小： 455K
代理商： PA28F002BC-T120
28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
E
10
PRELIMINARY
1.5
Pin Descriptions
Table 1. 28F002BC Pin Descriptions
Symbol
Type
Name and Function
A
–1
,
A
0
–A
17
INPUT
ADDRESS INPUTS
for memory addresses. Addresses are internally latched
during a write cycle. A
-1
is used on the PSOP package only. A
17
is used on the
TSOP and PDIP packages.
ADDRESS INPUT:
When A
9
is at V
HH,
the signature mode is accessed. During
this mode, A
0
decodes between the manufacturer and device IDs.
A
9
INPUT
DQ
0
–
DQ
7
INPUT/
OUTPUT
DATA INPUTS/OUTPUTS:
Inputs array data on the second CE# and WE#
cycle during a program operation. Inputs commands to the Command User
Interface when CE# and WE# are active. Data is internally latched during the
write cycle. Outputs array, Intelligent Identifier and Status register data. The
data pins float to tri-state when the chip is de-selected or the outputs are
disabled.
CE#
INPUT
CHIP ENABLE:
Activates the device’s control logic, input buffers, decoders and
sense amplifiers. CE# is active low. CE# high deselects the memory device and
reduces power consumption to standby levels. If CE# and RP# are high, but not
at a CMOS high level, the standby current will increase due to current flow
through the CE# and RP# input stages.
OE#
INPUT
OUTPUT ENABLE:
Enables the device’s outputs through the data buffers
during a read cycle. OE# is active low.
WE#
INPUT
WRITE ENABLE:
Controls writes to the Command Register and array blocks.
WE# is active low. Addresses and data are latched on the rising edge of the
WE# pulse.
RP#
INPUT
RESET/DEEP POWER-DOWN:
Provides three-state control. Puts the device in
deep power-down mode, locks, and unlocks the boot block from program/erase.
When RP# is at logic high level (6.5V maximum), the boot block is locked and
cannot be programmed or erased.
When RP# = V
(11.4V minimum ), the boot block is unlocked and can be
programmed or erased.
When RP# is at a logic low level the boot block is locked, the deep power-down
mode is enabled and the WSM is reset—preventing any blocks from being
programmed or erased. When RP# transitions from logic low to logic high, the
flash memory enters the read array mode.
V
CC
DEVICE POWER SUPPLY:
5.0V
±
10%, 5.0V ± 5%
V
PP
PROGRAM/ERASE POWER SUPPLY:
For erasing memory array blocks or
programming data in each block. When V
PP
< V
PPLK
all blocks are locked and
memory contents cannot be altered.
GND
GROUND:
For all internal circuitry.
NC
NO CONNECT:
Pin may be driven or left floating.
相關(guān)PDF資料
PDF描述
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