參數(shù)資料
型號(hào): PA2423
廠商: SiGe Semiconductor, Inc.
英文描述: 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information
中文描述: 2.4 GHz的藍(lán)牙Class 1功率放大器IC產(chǎn)品信息
文件頁(yè)數(shù): 4/10頁(yè)
文件大小: 370K
代理商: PA2423
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
AC Electrical Characteristics
Conditions
V
CC0
= V
CC1
= V
CC2
= V
RAMP
=3.3V, V
CTL
= 3.3V, PIN =+2 dBm, T
A
=25
°
C, f =2.45 GHz,
Input and Output externally matched to 5
0,
unless otherwise noted.
Symbol
Note
Parameter
Min.
Typ.
Max. Unit
f
L-U
3
Frequency Range
2400
2500
MHz
1
Output Power @ P
IN
=+2 dBm, V
CTL
= 3.3V
21
22.7
23.5
dBm
P
out
1
Output Power @ P
IN
=+2 dBm, V
CTL
=0.4V
-20
0
dBm
P
temp
3
Output Power variation over temperature (-4
C <T
A
<+8
C)
1
2
dB
dP
OUT
/dV
CTL
3
Control Voltage Sensitivity
120
dBm/V
PAE
Power Added Efficiency at +22.5 dBm Output Power
45
%
G
VAR
3
Gain Variation over band (2400-2500 MHz)
0.7
1.0
dB
2f, 3f, 4f, 5f
3,4
Harmonics
-35
-30
dBc
IS
21
I
OFF
2
Isolation in “OFF” State, P
IN
= +2dBm, V
RAMP
= 0V
20
25
dB
IS
12
I
2
Reverse Isolation
32
42
dB
STAB
2
Stability (P
IN
= +2dBm, Load VSWR = 6:1)
All non-harmonically related
outputs less than -50 dBc
Notes:
(1) Guaranteed by production test at T
A
=25
°
C.
(2) Guaranteed by design only
(3) Guaranteed by design and characterization
(4) Harmonic levels are greatly affected by topology of external matching networks.
DOC# 05PDS001
Rev 9
07/26/2001
Page 4 of 10
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