參數(shù)資料
型號(hào)： P87CL883T
廠商： NXP Semiconductors N.V.
英文描述： TELX microcontrollers for CT0 handset/basestation applications
中文描述： TELX微控制器CT0手機(jī)/基站應(yīng)用
文件頁(yè)數(shù)： 22/32頁(yè)
文件大小： 145K
代理商： P87CL883T
22
Philips Semiconductors
Product specification
TELX microcontrollers for CT0
handset/basestation applications
P8xCL883; P8xCL884
Inputs (Ports, MIN, RST, MOUT0 to MOUT2, PORENABLE)
V
IL
V
IH
I
IL
LOW-level input voltage
HIGH-level input voltage
LOW-level input current (ports in Mode 1)
notes 6 and 7
note 6
V
IN
= 0.4 V; note 8;
see Fig.9
V
IN
= 0.5V
DD
; note 8;
see Fig.9
0
0.8V
DD
0.2V
DD
V
V
DD
50
V
μ
A
10
I
IL(T)
LOW-level input current; HIGH-to-LOW
transition (ports in Mode 1)
input leakage current (ports in Mode 0 or 2) V
SS
≤
V
I
≤
V
DD
200
1000
μ
A
I
LI
1
μ
A
Port outputs (Ports, RST, MOUT0 to MOUT2)
I
OL
LOW-level output current; except P1.3,
SDA, SCL and MOUT2
LOW-level output current; P1.3 (for LED)
LOW-level output current; SDA, SCL and
MOUT2
HIGH-level output current except P1.3;
push-pull options only
HIGH-level output current P1.3
(for LED); push-pull options only
HIGH-level output current MOUT2
RST pull-up transistor current
V
OL
= 0.4 V
2
mA
I
OL1
I
OL2
V
OL
= 0.4 V
V
OL
= 0.4 V; note 9
6
3
mA
mA
I
OH
V
OH
= V
DD
0.4 V
2
mA
I
OH1
V
OH
= V
DD
0.4 V
6
mA
I
OH2
I
RST
V
OH
= V
DD
0.4 V
V
DD
= 3 V;
V
OH
= V
DD
0.4 V
V
DD
= 3 V; V
OH
= V
SS
3
0.05
0.2
mA
μ
A
0.6
2.5
μ
A
Power-on reset (POR); for the LVD (Low Voltage Detection)
see note 10
V
PORH
Power-on reset trip level HIGH
option 5 in “TELX family”
specification
option A in “TELX
family”specification
2.13
2.37
2.61
V
V
PORL
Power-on reset trip level LOW
1.98
2.27
2.56
V
TONE output
(note 11 and Fig.13)
V
HG(rms)
V
LG(rms)
f/f
V
DC
V
G
THD
HGF voltage (RMS)
LGF voltage (RMS)
frequency deviation
DC voltage level
pre-emphasis of group
total harmonic distortion
V
DD
= 3 V
158
125
0.6
1.5
181
142
0.5V
DD
2.0
25
205
160
+0.6
mV
mV
%
V
dB
dB
2.5
V
DD
= 3 V; T
amb
= 25
°
C;
notes 5 and 12
EEPROM
(notes 5 and 13)
t
E/W
N
E/W
t
DR
erase/write time
erase/write cycles
data retention time
8
10
5
10
10
12
ms
T
amb
= +70
°
C
years
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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