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參數(shù)資料
| 型號： | P7NB80FP |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET |
| 中文描述： | ? -頻道800V的- 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET的 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 106K |
| 代理商： | P7NB80FP |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 400 V
R
G
= 4.7
(see test circuit, figure 3)
V
DD
= 640 V
R
G
= 4.7
I
D
= 3.5 A
V
GS
= 10 V
20
10
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 7 A V
GS
= 10 V
40
10
18
52
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 640 V
R
G
= 4.7
(see test circuit, figure 5)
I
D
= 7 A
V
GS
= 10 V
15
15
25
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
6.5
26
A
A
V
SD
(
)
t
rr
I
SD
= 6.5 A
V
GS
= 0
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 7 A
V
DD
= 100 V
(see test circuit, figure 5)
di/dt = 100 A/
μ
s
T
j
= 150
o
C
750
7.10
19
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area for TO-220
SafeOperating Area for TO-220FP
STP7NB80/FP
3/9
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P7NK80Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800V - 1.5ヘ - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected SuperMESH⑩ Power MOSFET |
| P7NK80ZFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800V - 1.5ヘ - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected SuperMESH⑩ Power MOSFET |
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