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參數(shù)資料
| 型號： | P7NB80FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET |
| 中文描述： | ? -頻道800V的- 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 106K |
| 代理商： | P7NB80FP |
STP7NB80
STP7NB80FP
N - CHANNEL 800V - 1.2
- 6.5A - TO-220/TO-220FP
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 1.2
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
April 1999
TO-220
TO-220FP
1
2
3
1
2
3
TYPE
V
DSS
R
DS(on)
< 1.5
< 1.5
I
D
STP7NB80
STP7NB80FP
800 V
800 V
6.5 A
6.5 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP7NB80
STP7NB80FP
800
800
±
30
6.5(*)
4.1(*)
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operatingarea
(
*) Limitedonly maximumtemperature allowed
V
V
V
A
A
A
W
6.5
4.1
26
135
1.08
4.5
--
26
40
0.32
4.5
2000
W/
o
C
V/ns
o
C
o
C
o
C
dv/dt(
1
)
V
ISO
T
stg
T
j
-65 to 150
150
(
1
) I
SD
≤
6.5A,di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
1/9
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