參數(shù)資料
型號： P6SMB56A-5B
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝： PLASTIC, SMB, 2 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 68K
代理商： P6SMB56A-5B
P6SMB Series
Vishay Semiconductors
formerly General Semiconductor
Surface Mount TRANSZORB
Transient Voltage Suppressors
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Dimensions in inches
and (millimeters)
DO-214AA
(SMB J-Bend)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low incremental surge resistance
600W peak pulse power capability with a 10/1000
s
waveform, repetition rate (duty cycle): 0.01%
Excellent clamping capability
Very fast response time
Mechanical Data
Case: JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026. High temperature soldering guaranteed:
250
°C/10 seconds at terminals.
Polarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation.
Standard Packaging: 12mm tape (EIA STD RS-481)
Weight: 0.003 oz., 0.093 g
Packaging Codes – Options (Antistatic):
51 – 2K per Bulk box, 20K/carton
52 – 750 per 7" plastic Reel (12mm tape), 15K/carton
5B – 3.2K per 13" plastic Reel (12mm tape), 32K/carton
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. P6SMB10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak power dissipation with a 10/1000
s waveform(1)(2)(Fig. 1)
PPPM
Minimum 600
W
Peak pulse current with a 10/1000
s waveform(1)
IPPM
See Next Table
A
Power dissipation on infinite heatsink, TA = 50°C
PM(AV)
5.0
W
Peak forward surge current 8.3ms single half sine-wave
IFSM
100
A
uni-directional only(2)
Operating junction and storage temperature range
TJ, TSTG
–65 to +150
°C
Thermal resistance junction to ambient air(3)
R
θJA
100
°C/W
Thermal resistance junction to leads
R
θJL
20
°C/W
Operating junction and storage temperature range
TJ, TSTG
–65 to +150
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2.
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Extended
Voltage
Range
V(BR) Unidirectional 6.8 to 540V
V(BR) Bidirectional 6.8 to 220V
Peak Pulse Power 600W
Document Number 88370
www.vishay.com
13-Nov-02
1
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PDF描述
P6SMB350A-HE3/5B 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
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相關代理商/技術參數(shù)
參數(shù)描述
P6SMB56A-E3/1 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 56V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMB56A-E3/51 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 56V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMB56A-E3/52 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 56V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMB56A-E3/55 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 56V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMB56A-E3/5B 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 56V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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