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參數(shù)資料
| 型號： | P6SMB68A-HE3/52 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 99K |
| 代理商： | P6SMB68A-HE3/52 |
Vishay General Semiconductor
P6SMB Series
Document Number 88370
08-Sep-06
www.vishay.com
1
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in Unidirectional and Bidirectional
600 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty cycle):
0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients
induced
by
inductive
load
switching
and lighting on ICs, MOSFET, signal lines of
sensor units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For unidirectional types the band denotes
cathode end, no marking on bidirectional types
DO-214AA (SMB)
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional devices use CA suffix (e.g. P6SMB10CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
V(BR) Unidirectional
6.8 V to 540 V
V(BR) Bidirectional
6.8 V to 220 V
PPPM
600 W
PD
5.0 W
IFSM (Unidirectional only)
100 A
Tj max.
150 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak power dissipation with a 10/1000 s waveform (1,2) (Fig. 1)
PPPM
Minimum 600
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
see next table
A
Power dissipation on infinite heatsink TA = 50 °C ,
PD
5.0
W
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P6SMB68A-M3/52 | 制造商:Vishay Semiconductors 功能描述:600W,68V 5%,UNIDIR,SMB TVS |
| P6SMB68A-M3/5B | 制造商:Vishay Semiconductors 功能描述:600W,68V 5%,UNIDIR,SMB TVS |
| P6SMB68AT3 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 68V 600W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB68AT3G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 68V 600W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB68AT3G | 制造商:ON Semiconductor 功能描述:ZENER DIODE |
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