參數(shù)資料
型號: P2H60QH10
廠商: NIHON INTER ELECTRONICS CORP
元件分類: 參考電壓二極管
英文描述: Schottky Barrier Diode
中文描述: 60 A, 100 V, SILICON, RECTIFIER DIODE
封裝: MODULE-4
文件頁數(shù): 1/4頁
文件大?。?/td> 172K
代理商: P2H60QH10
RB706D-40
Diodes
Schottky barrier diode
RB706D-40
z
Applications
Low current rectification
z
Features
1) Small mold type. (SMD3)
2) Low I
R
3) High reliability.
z
Construction
Silicon epitaxial planar
Rev.B
1/3
z
External dimensions
(Unit : mm)
z
Taping specifications
(Unit : mm)
z
Land size figure
(Unit : mm)
z
Structure
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
0.4
+0.1
-0.06
2.9±0.2
各リードとも
Each lead has same dimension
2
1.9±0.2
1
0.95
0.95
+0.1
 -0.05
0~0.1
0.15
1.1±0.2
0.01
0.8±0.1
(2)
(1)
(3)
0
1
0.8MIN.
2
0.95
1.9
3.2±0.1
4.0±0.1
4.0±0.1
2.0±0.05
φ1.5±0.1
      0
3
z
Absolute maximum ratings
(Ta=25
°
C)
z
Electrical characteristics
(Ta=25
°
C)
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Unit
V
V
mA
mA
F
Junc
St
(
Ave
orward current surge peak
60Hz
1cyc
(*1)
tion temperature
orage temperature
*1) Rating of per diode : Io/2
200
125
-40 to +125
Limits
45
40
30
Parameter
everse voltage (DC)
rage rectified forward current (*1)
everse voltage (repetitive peak)
R
R
5
0
8
1
1.35±0.1
3
φ1.05MIN
3
0.3±0.1
5
0
Symbol
V
F
1
I
R
1
Ct1
Min.
-
-
-
Typ.
-
-
2.0
Max.
0.37
1
-
Unit
V
μA
pF
Conditions
I
F
=1mA
V
R
=10V
V
R
=1V , f=1MHz
Reverse current
Capacitance between terminals
Forward voltage
Parameter
相關(guān)PDF資料
PDF描述
P2H60QH20 Schottky Barrier Diode
P2H80F2 FRD MODULE 80A/200V
P2H80F4 FRD MODULE 80A/400V
P2H80QH10 Schottky Barrier Diode
P2H80QH15 Schottky Barrier Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P2H60QH15 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode
P2H60QH20 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode
P2H7M440H 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:50A 450~500V
P2H7M440L 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:50A 450~500V
P2H7M441H 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:50A 450~500V