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參數(shù)資料
| 型號： | P2H80QH10 |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Diode |
| 中文描述： | 80 A, 100 V, SILICON, RECTIFIER DIODE |
| 封裝： | MODULE-4 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 189K |
| 代理商： | P2H80QH10 |
SBD
MODULE
80A/100V
OUTLINE DRAWING
P2H80QH10
Maximum Ratings
Approx Net Weight:35g
FEATURES
* Compatible with Isolated Base SOT227
* Dual Separated Diodes
* Extremely Low Forward Voltage Drop
* Low Power Loss, High Efficiency
* High Surge Capability
TYPICAL APPLICATIONS
* High Frequency Rectification
See the Next Page
Type / Grade
Parameter
Symbol
P2H80QH10
100
-
-
-
-
Unit
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
Parameter
V
RRM
V
RSM
V
Conditions
Max Rated
Value
Unit
Average Rectified Output Current *1
I
O(AV)
50Hz Half Sine Wave condition
Tc=94
°
C
50 Hz Half Sine Wave,1Pulse
Non-repetitive
80
A
Surge Forward Current *1
I
FSM
400
A
Operating J unctionTemperature Range
Storage Temperature Range
Isoration Voltage
Tjw
Tstg
Viso
-40 to +150
-40 to +125
2500
1.5(1.4)
°
C
°
C
V
Base Plate to Terminals, AC1min
M4Screw
M4Screw
with Thermal Compound
Terminals
Mounting torque
Case mounting
Ftor
1.5(1.4)
N
m
Electrical
Thermal Characteristics
Characteristics
Symbol
I
RM
V
FM
Rth(j-c) J unction to Case
Rth(c-f) Base Plate to Heat Sink with Thermal
Compound
Test Conditions
Max. Unit
40
0.97
0.53
Peak Reverse Current *1
Peak Forward Voltage *1
V
RM
= V
RRM,
Tj= 25
°
C
I
FM
= 80A, Tj=25
°
C
μ
A
V
Thermal Resistance *1
0.3
°
C/W
*1: Value Per 1Arm
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