參數(shù)資料
型號: P28F001BX-T90
廠商: INTEL CORP
元件分類: PROM
英文描述: 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
中文描述: 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
封裝: 0.620 X 1.640 INCH, PLASTIC, DIP-32
文件頁數(shù): 33/33頁
文件大?。?/td> 436K
代理商: P28F001BX-T90
28F001BX-T/28F001BX-B
Revision History
Number
Description
-004
Removed
Preliminary
classification.
Latched address A
16
in Figure 5.
Updated Boot Block Program and Erase section: ‘‘If boot block program or erase is attempted
while RP
Y
is at V
IH
,
either the Program Status or Erase Status bit will be set to ‘‘1’’,
reflective of the operation being attempted and indicating boot block lock.’’
Updated Figure 11, 28F001BX Erase Suspend/Resume Flowchart
Added DC Characteristics typical current values
Combined V
PP
Standby current and V
PP
Read current into one V
PP
Standby current spec with
two test conditions (DC Characteristics table)
Added maximum program/erase times to Erase and Programming Performance table.
Added Figures 13–16
Added Extended Temperature proliferations
-005
PWD changed to RP
Y
for JEDEC standardization compatibility
Revised symbols, i.e.; CE, OE, etc. to CE
Y
, OE
Y
, etc.
-006
Added specifications for -90 and -70 product versions.
Added V
OH
CMOS Specification.
-007
Added reference to 28F001BN.
33
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