參數(shù)資料
型號: P16NE
廠商: 意法半導(dǎo)體
英文描述: N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET
中文描述: ? -溝道增強(qiáng)模式單一的功能規(guī)格]功率MOSFET
文件頁數(shù): 3/7頁
文件大?。?/td> 70K
代理商: P16NE
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 30 V
R
G
=4.7 W
I
D
= 8 A
V
GS
= 5V
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 40 V
I
D
= 16 A
V
GS
= 5 V
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 48 V
R
G
=4.7
I
D
= 16 A
V
GS
= 5 V
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
A
A
V
SD
(
)
t
rr
I
SD
= 16 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 16 A
V
DD
= 30 V
ns
μ
C
A
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Pulse widthlimited by safe operating area
STP16NE06L/FP
3/7
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