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參數(shù)資料
| 型號(hào)： | P13914EJ1V0AN00 |
| 英文描述： | uPC8128TB. uPC8151TB. and uPC8152TB Low-Current Silicon MMIC Amplifiers for Cellular/Cordless Telephones |
| 中文描述： | uPC8128TB。 uPC8151TB。和uPC8152TB低電流硅單片放大器的蜂窩/無繩電話 |
| 文件頁數(shù)： | 6/35頁 |
| 文件大?。?/td> | 233K |
| 代理商： | P13914EJ1V0AN00 |
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6
Application Note P13914EJ1V0AN00
2.
PRODUCT LINE-UP
2.1 Characteristics
Table 2-1 shows the line-up of low-current silicon MMIC amplifiers for cellular/cordless telephones.
Table 2-1. Low-Current Silicon MMIC Amplifiers for Cellular/Cordless Telephones Product Line-up
(T
A
= +25
°
C, V
CC
= V
out
= 3.0 V, Z
L
= Z
S
= 50
)
1.0-GHz Output Port
Matching Frequency
1.66-GHz Output Port
Matching Frequency
1.9-GHz Output Port
Matching Frequency
Part Number
(Bulk Part Number)
V
CC
(V)
I
CC
(mA)
G
P
(dB)
ISL
(dB)
P
O (1 dB)
(dBm)
G
P
(dB)
ISL
(dB)
P
O (1 dB)
(dBm)
G
P
(dB)
ISL
(dB)
P
O (1 dB)
(dBm)
Marking
μ
PC8128TB
2.8
12.5
39
–4.0
13.0
39
–4.0
13.0
37
–4.0
C2P
μ
PC8151TB
4.2
12.5
38
+2.5
15.0
36
+1.5
15.0
34
+0.5
C2U
μ
PC8152TB
2.4 to
3.3
5.6
23.0
40
–4.5
19.5
36
–8.5
17.5
35
–8.5
C2V
Remark
The above values are typical values for major characteristics. See each product's data sheet for detailed
ratings and characteristic, etc.
This line-up achieves low-current consumption, high efficiency, and high gain with the power supply voltage in the
3-V range. The low circuit current consumption is approximately 40% of the 5 to 7.5 mA consumed by the existing
μ
PC2745 to
μ
PC2748 products. These products use a 6-pin mini mold package of size 2012. Figure 2-1 shows
external views of this package (package drawing).
Due to limited printing space on these mini mold ICs, a three-character is marked instead of part number shown
on the molds. Each three-character marking corresponds to a different part number. Due to space limitations, the
pin 1 mark is printed on the bottom side. Figure 2-2 shows a marking example of these products.
Taping is used as the supplying form for all products and the part number is "Bulk part No. - taping code." For
details, refer to the data sheet.
All ICs in this product line-up have been developed and manufactured using NEC's proprietary NESAT
III silicon
bipolar process. For details about this process, refer to the pamphlet entitled "NESAT Process pamphlet" (Document
No. P12647E).
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