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參數(shù)資料
| 型號(hào)： | OM60L60SB |
| 英文描述： | High Current, High Voltage 600V , 75 Amp IGBT With FRED Diodes(大電流，高電壓，600V , 75A，絕緣柵雙極型晶體管（帶快速恢復(fù)外延二極管(FRED)，半橋結(jié)構(gòu)）) |
| 中文描述： | 高電流，高電壓600V，75安培IGBT的與弗雷德二極管（大電流，高電壓在600V，75A條，絕緣柵雙極型晶體管（帶快速恢復(fù)外延二極管（弗雷德），半橋結(jié)構(gòu)）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 18K |
| 代理商： | OM60L60SB |
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
OM60L60SB OM45L120SB OM50F60SB OM35F120SB
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameters
60L60SB
45L120SB
50F60SB
35F120SB
Units
V
CES
Drain Source Voltage
600
1200
600
1200
V
V
CGR
Drain Gate Voltage (R
GS
= 1.0 M)
600
1200
600
1200
V
I
C
@ T
C
= 25°C
Continuous Drain Current
75
70
75
70
A
I
C
@ T
C
= 90°C
Continuous Drain Current
60
45
50
35
A
I
C
Pulsed
Pulsed Drain Current
1
200
180
200
140
A
P
D
@ T
C
= 25°C
Max. Power Dissipation
250
250
250
250
W
P
D
@ T
= 100°C
Max. Power Dissipation
100
100
100
100
W
Junction-To-Case
Linear Derating Factor
2
2
2
2
W/°C
Junction-To-Ambient Linear Derating Factor
.033
.033
.033
.033
W/°C
T
j
, T
stg
Operating And Storage Temperature Range
-55 to +150
-55 to +150
-55 to +150
-55 to +150
°C
Lead Temperature (1/16" from case for 10 sec.)
230
230
230
230
°C
R
thJC
Thermal Resistance (Junction-To-Case)
0.5
0.5
0.5
0.5
°C/W
R
thJA
Thermal Resistance (Junction-To-Ambient)
30
30
30
30
°C/W
Note: 1. Pulse Test:
Pulse Width 300 μsec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Test Condition
Symbol
Part No.
Min.
Max.
Units
Gate Threshold Voltage
V
CE
= V
GE
, I
D
= 250μA
V
GE(th)
All
2.5
5.0
V
Gate-Emitter Leakage Current
V
GE
= ±20 V
DC
I
GES
All
±100
nA
Off State
V
CE
= V
DSS
x 0.8 T
C
= 25°C
I
CES
All
200
μA
Collector-Emitter Leakage
V
GS
= 0V T
C
= 125°C
I
CES
All
1
mA
60L60SB
600
Collector-Emitter
V
GE
= 0V, I
C
= 250 μA
V
CES
45L120SB
1200
Breakdown Voltage
50F60SB
600
35F120SB
1200
V
60L60SB
1.8
45L120SB
3.0
Static Collector-Emitter Voltage
V
GE
= 15V, I
C
= I
C(100)
x 0.5
V
CE(sat)
50F60SB
2.7
35F120SB
4.0
The above data is preliminary.
Please contact factory for additional data and the dynamic and switching characteristics.
相關(guān)PDF資料 |
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| OM35F120SB | High Current, High Voltage 1200V, 70 Amp IGBT With FRED Diodes(大電流，高電壓，1200V , 70A，絕緣柵雙極型晶體管（帶快速恢復(fù)外延二極管(FRED)，半橋結(jié)構(gòu)）) |
| OM45L120SB | High Current, High Voltage 1200V, 70 Amp IGBT With FRED Diodes(大電流，高電壓，1200V , 70A，絕緣柵雙極型晶體管（帶快速恢復(fù)外延二極管(FRED)，半橋結(jié)構(gòu)）) |
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| OM50N05SA | 50V Ultra Low R DS(on) Power MOSFET(極低漏源極導(dǎo)通電阻，50V功率MOS場(chǎng)效應(yīng)管) |
| OM50N05ST | 50V Ultra Low R DS(on) Power MOSFET(極低漏源極導(dǎo)通電阻，50V功率MOS場(chǎng)效應(yīng)管) |
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參數(shù)描述 |
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