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參數(shù)資料
| 型號(hào)： | OM6050SJ |
| 英文描述： | High Current, High Voltage 100V , 100 Amp N-Channel, MOSFET, High Energy Capability(大電流，高電壓，100V , 100A，N溝道，MOS場(chǎng)效應(yīng)管（高能容量）) |
| 中文描述： | 高電流，高電壓100V，100安培N溝道，MOSFET的高能能力（大電流，高電壓，100V的，100號(hào)A，?溝道來說，MOS場(chǎng)效應(yīng)管（高能容量）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | OM6050SJ |
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
OM6050SJ - OM6055SJ
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 C unless otherwise noted)
Parameter
Symbol
OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ
Unit
Drain Source Voltage
V
DS
100
200
500
600
800
1000
V
Drain Gate Voltage (R
GS
= 1.0 M )
V
DGR
100
200
500
600
800
1000
V
Continuous Drain Current @ T
C
= 25°C
2
I
D
100
55
30
25
18
10
A
Continuous Drain Current @ TC = 100°C
2
I
D
43
23
13
10
7
4
A
Pulsed Drain Current1
I
DM
235
135
80
75
50
30
A
Max. Power Dissipation @ T
C
= 25°C
P
D
280
W
Max. Power Dissipation @ T
C
= 100°C
P
D
110
W
Linear Derating Factor Junction-to-Case
2.22
W/°C
Linear Derating Factor Junction-to-Ambient
.025
W/°C
Operating and Storage Temp. Range
T
J
, T
stg
-55 to +150
° C
Lead Temperature (1/16" from case for 10 sec.)
275
° C
Notes: 1. Pulse Test:
Pulse Width
￡
300
m
sec, Duty Cycle
￡
2%.
2. Package Pin Limitation:
35 Amps.
THERMAL RESISTANCE (MAXIMUM)
@ TA= 25 C
Junction-to-Case
R
thJC
R
thJA
.45
° C/W
Junction-to-Ambient (Free Air Operation)
40
° C/W
PRELIMINARY ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Test Condition
Symbol
Part No.
Min.
Max.
Units
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
V
GS(th)
All
2.0
4.0
V
Gate Source Leakage Current
V
GS
= ±20 V
DC
I
GSS
All
±100
nA
Off State Drain-Source Leakage
V
DS
= V
DSS
x 0.8 T
C
= 25°C
I
DSS
All
10
μA
V
GS
= 0V T
C
= 125°C
I
DSS
All
.10
mA
OM6050SJ
100
OM6051SJ
200
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250 μA
V
DSS
OM6052SJ
500
V
OM6053SJ
600
OM6054SJ
800
OM6055SJ
1000
OM6050SJ
.014
OM6051SJ
.030
Drain-Source Breakdown Voltage
V
GS
= 10V, I
D
= I
D25
x 0.5
R
DS(on)
OM6052SJ
.160
OM6053SJ
.230
OM6054SJ
.500
OM6055SJ
.800
The above data is preliminary. Please contact factory for additional data
and the dynamic and switching characteristics.
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| OM6054SJ | High Current, High Voltage 800V , 18 Amp N-Channel, MOSFET, High Energy Capability(大電流，高電壓，800V , 18A，N溝道，MOS場(chǎng)效應(yīng)管（高能容量）) |
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參數(shù)描述 |
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| OM6050SJP | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 100A 3PIN TO-267AA - Bulk |
| OM6050SJT | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 100A 3PIN TO-267 - Bulk |
| OM6051SJ | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on) |
| OM6051SJP | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 55A 3PIN TO-267AA - Bulk |
| OM6052SJ | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on) |
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