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參數(shù)資料
| 型號： | OM6055SJ |
| 英文描述： | High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大電流，高電壓，1000V , 10A，N溝道，MOS場效應(yīng)管（高能容量）) |
| 中文描述： | 高電流，高電壓1000V，10安培N溝道，MOSFET的高能能力（大電流，高電壓，1000V的10A條，?溝道來說，MOS場效應(yīng)管（高能容量）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 19K |
| 代理商： | OM6055SJ |
3.1 - 105
3.1
High Current, High Voltage 100V Thru 1000V,
Up To 100 Amp N-Channel, Size 7 MOSFETs,
High Energy Capability
HIGH CURRENT MOSFET IN ISOLATED, TO-267
HERMETIC PACKAGE, SIZE 7 DIE, LOW R
DS(on)
FEATURES
Isolated Hermetic Metal Package
Size 7 Die, High Energy
Fast Switching, Low Drive Current
Ease Of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS
@ 25°C
PART NUMBER
OM6050SJ
OM6051SJ
OM6052SJ
OM6053SJ
OM6054SJ
OM6055SJ
4 11 R0
OM6054SJ
OM6055SJ
OM6052SJ
OM6053SJ
OM6050SJ
OM6051SJ
V
DS
100 V
200 V
500 V
600 V
800 V
1000 V
R
DS(on)
.014
.030
.160
.230
.500
.800
I
D
(Continuous)
100 A
55 A
30 A
25 A
18 A
10 A
SCHEMATIC
MECHANICAL OUTLINE
.950
.930
.150
.140
.750
.500
.805
.795
.200
.400
.200
.155
.665
.645
.160
.290
.260
.065
.055
.065
.055
1
3
2
1
2 3
TO-267
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