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參數(shù)資料
| 型號： | OM50N06ST |
| 英文描述： | 60V Ultra Low R DS(on) Power MOSFET(極低漏源極導(dǎo)通電阻，60V功率MOS場效應(yīng)管) |
| 中文描述： | 60V的超低R DS（on）的功率MOSFET（極低漏源極導(dǎo)通電阻，60V的功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 60K |
| 代理商： | OM50N06ST |
3.1 - 65
3.1
50V And 60V Ultra Low R
DS(on)
Power MOSFETs In TO-257 And TO-254
Isolated Packages
4 11 R1
Supersedes 3 02 R0
LOW VOLTAGE, LOW R
DS(on)
POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
FEATURES
Isolated Hermetic Metal Packages
Ultra Low R
DS(on)
Low Conductive Loss/Low Gate Charge
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate charge simpler drive circuitry.
MAXIMUM RATINGS
(Per Device)
OM50N06ST
OM50N05ST
OM60N05SA
OM50N05SA
OM60N06SA
OM50N06SA
PART NO.
OM60N06SA
OM50N06SA
OM50N06ST
OM60N05SA
OM50N05SA
OM50N05ST
V
DS
(V)
60
60
60
50
50
50
R
DS(on)
( )
.025
.030
.035
.025
.030
.035
I
D
(A)
60
50
50
60
50
50
Package
TO-254AA
TO-254AA
TO-257AA
TO-254AA
TO-254AA
TO-257AA
SCHEMATIC
T-3 PIN
CONNECTION
M-PAK PIN
CONNECTION
Drain
Source
Gate
1 2 3
1
2
3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
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