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參數(shù)資料
| 型號(hào)： | OM50N05ST |
| 英文描述： | 50V Ultra Low R DS(on) Power MOSFET(極低漏源極導(dǎo)通電阻，50V功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 50V超低R DS（on）的功率MOSFET（極低漏源極導(dǎo)通電阻的50V功率馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | OM50N05ST |
3.1 - 66
OM60N06SA - OM50N05ST
3.1
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
50N06ST
50N05SA
50N05ST
50N05SA
Parameter
60N06SA
60N05SA
Units
V
DS
Drain-Source Voltage
60
60
50
50
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
60
60
50
50
V
I
D
@ T
C
= 25°C
Continuous Drain Current
2
55
50
55
50
A
I
D
@ T
C
= 100°C
Continuous Drain Current
2
37
33
37
33
A
I
DM
Pulsed Drain Current
1
220
200
220
200
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
100
100
100
100
W
P
D
@ T
C
= 100°C
Maximum Power Dissipation
40
40
40
40
W
Junction-To-Case
Linear Derating Factor
1
.80
.80
.80
.80
W/°C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Lead Temperature (1/16" from case for 10 secs.)
300
300
300
300
°C
1 Pulse Test:
Pulse width 300 μsec. Duty Cycle 1.5%.
2 Package Limited SA I
D
= 25 A, SC SC I
D
= 35 A @ 25
C
THERMAL RESISTANCE
R
thJC
PACKAGE LIMITATIONS
Junction-to-Case
1.25
°C/W
Parameters
TO254AA
TO-257AA
Unit
I
D
Continuous Drain Current
25
15
A
Linear Derating Factor, Junction-to-Ambient
.020
.015
W/°C
R
thJA
Thermal Resistance, Junction-to-Ambient (Free Air Operation)
50
65
°C/W
Linear Derating, Junction-to-Case
0.8
0.8
W/°C
.144 DIA.
.050
.260
.685
.800
.545
.535
.550
.045
.550
.150 TYP.
.150 TYP.
.005
.430
.200
.038 MAX.
.005
.120 TYP.
.537
.665
.420
.150
.750
.100 TYP.
.035
.045
T-3 MECHANICAL OUTLINE
M-PAK MECHANICAL OUTLINE
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Notes:
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the
part number. Example - OMXXXXCSA.
MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OM60N05SA | 50V Ultra Low R DS(on) Power MOSFET(極低漏源極導(dǎo)通電阻，50V功率MOS場(chǎng)效應(yīng)管) |
| OM60N06SA | 60V Ultra Low R DS(on) Power MOSFET(極低漏源極導(dǎo)通電阻，60V功率MOS場(chǎng)效應(yīng)管) |
| OM50N06ST | 60V Ultra Low R DS(on) Power MOSFET(極低漏源極導(dǎo)通電阻，60V功率MOS場(chǎng)效應(yīng)管) |
| OM5193 | Disk drive spindle and VCM with servo controller |
| OM5193H | Disk drive spindle and VCM with servo controller |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OM50N05SW | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:50V Single N-Channel Hi-Rel MOSFET in a D3 package |
| OM50N06CSA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-254AA |
| OM50N06CST | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-257AA |
| OM50N06SA | 制造商:IRF 制造商全稱:International Rectifier 功能描述:LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE |
| OM50N06SR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:60V Single N-Channel Hi-Rel MOSFET in a D2 package |
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