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參數資料
| 型號： | OM460NK |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 500V單N溝道高可靠性MOSFET的采用TO - 204AE包 |
| 文件頁數： | 3/4頁 |
| 文件大小： | 30K |
| 代理商： | OM460NK |
3.1 - 39
OM360NK - OM10N100NK
3.1
ELECTRICAL CHARACTERISTICS:
OM10N100NK
(T
C
= 25° unless otherwise noted)
Symbol
Characteristic
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
V
(BR)DSS
I
DSS
1000
-
-
Vdc
mAdc
(V
DS
= 1000 V, V
GS
= 0)
(V
DS
= 1000 V, V
GS
= 0, T
J
= 125° C)
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
ON CHARACTERISTICS
*
Gate-Threshold Voltage
-
-
0.25
-
-
1.0
I
GSSF
I
GSSR
-
-
100
nAdc
-
-
100
nAdc
V
GS(th)
Vdc
(V
DS
= V
GS
, I
D
= 0.25 mAdc)
(T
J
= 125° C)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 5 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 10 A)
(I
D
= 5 A, T
J
= 125° C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 5 Adc)
DYNAMIC CHARACTERISTICS-
Input Capacitance
2.0
3.0
4.5
1.5
-
4.0
R
DS(on)
V
DS(on)
-
-
1.3
Ohm
-
Vdc
-
-
14
-
-
14
g
FS
5.0
-
-
mhos
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
C
iss
C
oss
C
rss
-
3900
-
pF
Output Capacitance
-
300
-
Transfer Capacitance
-
65
-
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
-
40
-
ns
Rise Time
(V
DD
= 500 V, I
D
= 10 A,
R
gen
= 9.1 ohms)
-
60
-
Turn-Off Delay Time
-
100
-
Fall Time
-
70
-
Total Gate Charge
(V
DS
= 500 V, I
D
= 10 A,
V
GS
= 10 V)
-
100
-
nC
Gate-Source Charge
-
20
-
Gate-Drain Charge
-
40
-
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
V
SD
t
on
t
rr
-
-
1.1
Vdc
Forward Turn-On Time
(I
S
= 10 A, d/dt = 100 A/μs)
**
600
ns
Reverse Recovery Time
-
1000
*
** Limited by circuit inductance
Indicates Pulse Test = 300 μsec, Duty Cycle = 2%
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