參數(shù)資料
型號： OM460NK
英文描述： SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
中文描述： 500V單N溝道高可靠性MOSFET的采用TO - 204AE包
文件頁數(shù)： 2/4頁
文件大?。?/td> 30K
代理商： OM460NK
3.1 - 38
OM360NK - OM10N100NK
3.1
ELECTRICAL CHARACTERISTICS:
Characteristic
OM360NK
(T
C
= 25° unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
V
(BR)DSS
I
DSS
400
-
-
Vdc
mAdc
(V
DS
= 400 V, V
GS
= 0)
(V
DS
= 400 V, V
GS
= 0, T
J
= 125° C)
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
ON CHARACTERISTICS
*
-
-
0.25
-
-
1.0
I
GSSF
I
GSSR
-
-
100
nAdc
-
-
100
nAdc
Gate-Threshold Voltage
V
GS(th)
Vdc
(V
DS
= V
GS
, I
D
= 0.25 mAdc)
(T
J
= 125° C)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 12 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 24 A)
(I
D
= 12 A, T
J
= 125° C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 12 Adc)
DYNAMIC CHARACTERISTICS
2.0
3.0
4.0
1.5
-
3.5
R
DS(on)
V
DS(on)
-
-
0.20
Ohm
Vdc
-
-
5.4
-
-
5.4
g
FS
14
-
-
mhos
Input Capacitance
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
C
iss
C
oss
C
rss
-
4000
-
pF
Output Capacitance
-
550
-
Transfer Capacitance
SWITCHING CHARACTERISTICS
-
110
-
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
-
30
-
ns
Rise Time
(V
DD
= 200 V, I
D
= 24 A,
R
gen
= 4.3 ohms)
-
95
-
Turn-Off Delay Time
-
80
-
Fall Time
-
80
-
Total Gate Charge
(V
DS
= 320 V, I
D
= 24 A,
V
GS
= 10 V)
-
110
nC
Gate-Source Charge
-
22
-
Gate-Drain Charge
SOURCE DRAIN DIODE CHARACTERISTICS
-
46
-
Forward On-Voltage
V
SD
t
on
t
rr
-
1.1
1.6
Vdc
Forward Turn-On Time
(I
S
= 24 A, d/dt = 100 A/μs)
-
**
500
-
ns
Reverse Recovery Time
-
1000
ELECTRICAL CHARACTERISTICS:
OM460NK
(T
C
= 25° unless otherwise noted)
Symbol
Characteristic
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
V
(BR)DSS
I
DSS
500
-
-
Vdc
mAdc
(V
DS
= 500 V, V
GS
= 0)
(V
DS
= 500 V, V
GS
= 0, T
J
= 125° C)
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
ON CHARACTERISTICS
*
-
-
0.25
-
-
1.0
I
GSSF
I
GSSR
-
-
100
nAdc
-
-
100
nAdc
Gate-Threshold Voltage
V
GS(th)
Vdc
(V
DS
= V
GS
, I
D
= 0.25 mAdc)
(T
J
= 125° C)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 11 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 22 A)
(I
D
= 11 A, T
J
= 125° C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 11 Adc)
DYNAMIC CHARACTERISTICS
2.0
3.0
4.0
1.5
-
3.5
R
DS(on)
V
DS(on)
-
-
0.25
Ohm
Vdc
-
-
8.0
-
-
-
8.0
-
g
FS
11
mhos
Input Capacitance
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
C
iss
C
oss
C
rss
-
4000
-
pF
Output Capacitance
-
480
-
Transfer Capacitance
SWITCHING CHARACTERISTICS
-
95
-
Turn-On Delay Time
t
d(on)
t
r
T
d(off)
t
f
Q
g
Q
gs
Q
gd
-
32
-
ns
Rise Time
(V
DD
= 250 V, I
D
= 22 A,
R
gen
= 4.3 ohms)
-
95
-
Turn-Off Delay Time
-
80
-
Fall Time
-
80
-
Total Gate Charge
(V
DS
= 400 V, I
D
= 22 A,
V
GS
= 10 V)
-
115
-
nC
Gate-Source Charge
-
22
-
Gate-Drain Charge
SOURCE DRAIN DIODE CHARACTERISTICS
-
46
-
Forward On-Voltage
V
SD
t
on
t
rr
-
1.1
1.6
Vdc
Forward Turn-On Time
(I
S
= 22 A, d/dt =100 A/μs)
-
**
500
-
ns
Reverse Recovery Time
* Indicates Pulse Test = 300 μsec, Duty Cycle = 2%. ** Limited by circuit inductance
-
1000
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