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參數(shù)資料
| 型號： | OM360NK |
| 英文描述： | 400V, 24A,N-Channel MOSFETs, High Energy Capability(400V, 24A,N溝道，MOS場效應(yīng)管(高能容量)) |
| 中文描述： | 為400V，24A條，N溝道MOSFET，高能量能力（為400V，24A條，?溝道來說，MOS場效應(yīng)管（高能容量）） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 29K |
| 代理商： | OM360NK |
OM360NK - OM10N100NK
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
OM360NK
OM460NK
OM10N100NK
Units
V
DS
Drain-Source Voltage
400
500
1000
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
400
500
1000
V
I
D
@ T
C
= 25°C
Continuous Drain Current
24
22
10
A
I
DM
Pulsed Drain Current
92
85
40
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
200
200
200
W
Derate Above 25°C T
C
1.33
1.33
1.33
W/°C
W
DSS
(1)
Single Pulse Energy
Drain To Source @ 25°C
1000
1200
1000
mJ
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
°C
Lead Temperature
(1/8" from case for 5 secs.)
275
275
275
°C
Note 1:
V
DD
= 50V, I
D
= as noted
THERMAL RESISTANCE
(Maximum) at T
A
= 25°C
R
thJC
Junction-to-Case
.75
°C/W
R
thJA
Junction-to-Ambient
30
°C/W
Free Air Operation
Derate above 25°C T
A
.
033
W/°C
MECHANICAL OUTLINE
1.197
1.177
0.675
0.655
0.188 R.
MAX.
0.440
0.420
0.161
0.151
0.525 R.
MAX.
0.225
0.205
SEATING
PLANE
0.312
MIN.
0.450
0.250
0.063
0.135
MAX.
0.875
MAX.
1.53
REF.
Pin Connection
Pin 1: Gate
Pin 2: Source
Case: Drain
1
2
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