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參數(shù)資料
| 型號： | OM3105N |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Hybrid integrated circuits for inductive proximity detectors |
| 中文描述： | 電感式接近探測器的混合集成電路 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 36K |
| 代理商： | OM3105N |
January 1994
5
Philips Semiconductors
Preliminary specification
Hybrid integrated circuits for inductive
proximity detectors
OM3105P
20
80
400
MBD234
0
20
40
60
I
Ts
o
O max
(mA)
350
300
250
200
150
Fig.4
Overload protection as a function of the substrate temperature.
MOUNTING RECOMMENDATIONS
General
If a protective cap is incorporated, it should be as thin as
possible, because its thickness “d” forms part of the
operating distance “S”.
A brass stud wall should not extend beyond the potcore.
The exact value of “S” with its spread is determined by a
number of variables, e.g.:
value of the adjustment resistor R
x
,
the oscillator coil,
the metal of the actuator,
the material and shape of the housing.
Soldering recommendations
Use normal 60/40 solder.
Use a soldering iron with a fine point.
Soldering time should be kept to a minimum, not
exceeding 2.5 s per soldering point (T
sld
= 250
°
C
maximum).
The substrate should preferably be pre-heated to a
temperature of 100
°
C with a minimum of 80
°
C and a
maximum of 125
°
C.
Potting recommendations
First cover the hybrid IC with about 0.5 mm of silicone
rubber, let it harden and with the parts inserted in the tube,
fill up the tube with epoxy.
Fig.5 Insertion of potcore in brass tube.
MSB318
d
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